TSM2305CX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.3 EUR |
| 15000+ | 0.28 EUR |
| 21000+ | 0.27 EUR |
| 30000+ | 0.26 EUR |
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Technische Details TSM2305CX RFG Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 3.2A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V.
Weitere Produktangebote TSM2305CX RFG nach Preis ab 0.12 EUR bis 1.41 EUR
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TSM2305CX RFG | Hersteller : Taiwan Semiconductor |
MOSFETs -20V, -3.2A, Single P-Channel Power MOSFET |
auf Bestellung 14990 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM2305CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 3.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V |
auf Bestellung 91054 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM2305CX RFG | Hersteller : Taiwan Semiconductor |
P Channel Power MOSFET |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM2305CX RFG | Hersteller : Taiwan Semiconductor |
P Channel Power MOSFET |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM2305CX RFG | Hersteller : Taiwan Semiconductor Co., Ltd. |
Transistor P-Channel MOSFET; 20V; 8V; 130mOhm; 3,2A; 1,25W; -55°C ~ 150°C; TSM2305CX RFG TSM2305CX TTSM2305cx Anzahl je Verpackung: 100 Stücke |
auf Bestellung 170 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM2305CX RFG | Hersteller : Taiwan Semiconductor |
P Channel Power MOSFET |
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TSM2305CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 55mΩ Mounting: SMD Gate charge: 20nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |