TSM2309CX RFG Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.19 EUR |
| 15000+ | 0.18 EUR |
| 30000+ | 0.17 EUR |
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Technische Details TSM2309CX RFG Taiwan Semiconductor
Description: MOSFET P-CHANNEL 60V 3.1A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V, Power Dissipation (Max): 1.56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V.
Weitere Produktangebote TSM2309CX RFG nach Preis ab 0.15 EUR bis 1.24 EUR
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TSM2309CX RFG | Taiwan Semiconductor |
 Trans MOSFET P-CH 60V 3.1A 3-Pin SOT-23 T/R |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2309CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 60V 3.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM2309CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 8.2nC |
auf Bestellung 2807 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2309CX RFG | Taiwan Semiconductor |
MOSFETs -60V, -3.1A, Single P-Channel Power MOSFET |
auf Bestellung 2300 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM2309CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 60V 3.1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V |
auf Bestellung 42210 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM2309CX RFG | Taiwan Semiconductor Co., Ltd. |
Transistor P-Channel MOSFET; 60V; 20V; 240mOhm; 3,1A; 1,56W; -50°C ~ 150°C; TSM2309CX RFG TSM2309CX TTSM2309cx Anzahl je Verpackung: 50 Stücke |
auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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Hersteller: Taiwan Semiconductor
Trans MOSFET P-CH 60V 3.1A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 60V 3.1A 3-Pin SOT-23 T/R
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.18 EUR |
| 15000+ | 0.17 EUR |
| 21000+ | 0.15 EUR |
| TSM2309CX RFG |
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Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 3.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
Description: MOSFET P-CHANNEL 60V 3.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.25 EUR |
| 9000+ | 0.24 EUR |
| 15000+ | 0.23 EUR |
| 30000+ | 0.21 EUR |
| TSM2309CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 8.2nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 8.2nC
auf Bestellung 2807 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 242+ | 0.36 EUR |
| 325+ | 0.26 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| TSM2309CX RFG |
|
Hersteller: Taiwan Semiconductor
MOSFETs -60V, -3.1A, Single P-Channel Power MOSFET
MOSFETs -60V, -3.1A, Single P-Channel Power MOSFET
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.43 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.26 EUR |
| 9000+ | 0.21 EUR |
| TSM2309CX RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
Description: MOSFET P-CHANNEL 60V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
auf Bestellung 42210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| TSM2309CX RFG |
|
Hersteller: Taiwan Semiconductor Co., Ltd.
Transistor P-Channel MOSFET; 60V; 20V; 240mOhm; 3,1A; 1,56W; -50°C ~ 150°C; TSM2309CX RFG TSM2309CX TTSM2309cx
Anzahl je Verpackung: 50 Stücke
Transistor P-Channel MOSFET; 60V; 20V; 240mOhm; 3,1A; 1,56W; -50°C ~ 150°C; TSM2309CX RFG TSM2309CX TTSM2309cx
Anzahl je Verpackung: 50 Stücke
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.43 EUR |