TSM230N06PQ56 RLG

TSM230N06PQ56 RLG Taiwan Semiconductor Corporation


TSM230N06PQ56_B1710.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 44A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.67 EUR
5000+0.65 EUR
Mindestbestellmenge: 2500
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Technische Details TSM230N06PQ56 RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 60V 44A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V.

Weitere Produktangebote TSM230N06PQ56 RLG nach Preis ab 0.74 EUR bis 2.13 EUR

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TSM230N06PQ56 RLG TSM230N06PQ56 RLG Hersteller : Taiwan Semiconductor Corporation TSM230N06PQ56_B1710.pdf Description: MOSFET N-CH 60V 44A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
auf Bestellung 5680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
13+1.43 EUR
100+1.00 EUR
500+0.80 EUR
1000+0.74 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TSM230N06PQ56 RLG TSM230N06PQ56 RLG Hersteller : Taiwan Semiconductor 140tsm230n06pq56_b1710.pdf Trans MOSFET N-CH 60V 44A 8-Pin PDFN EP
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
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TSM230N06PQ56 RLG TSM230N06PQ56 RLG Hersteller : Taiwan Semiconductor 140tsm230n06pq56_b1710.pdf Trans MOSFET N-CH 60V 44A 8-Pin DFN EP T/R
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TSM230N06PQ56 RLG TSM230N06PQ56 RLG Hersteller : Taiwan Semiconductor 140tsm230n06pq56_b1710.pdf Trans MOSFET N-CH 60V 44A 8-Pin PDFN EP
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TSM230N06PQ56 RLG TSM230N06PQ56 RLG Hersteller : Taiwan Semiconductor TSM230N06PQ56_B1710.pdf MOSFETs 60V, 44A, Single N-Channel Power MOSFET
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