Technische Details TSM240N03CX RFG Taiwan Semiconductor
Description: MOSFET N-CHANNEL 30V 6.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Power Dissipation (Max): 1.56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V.
Weitere Produktangebote TSM240N03CX RFG nach Preis ab 0.2 EUR bis 1.18 EUR
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TSM240N03CX RFG | Taiwan Semiconductor |
 Trans MOSFET N-CH 30V 6.5A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM240N03CX RFG | Taiwan Semiconductor |
Trans MOSFET N-CH 30V 6.5A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM240N03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.1A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 398 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM240N03CX RFG | Taiwan Semiconductor | MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET |
auf Bestellung 15449 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM240N03CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 6.5A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM240N03CX RFG | Taiwan Semiconductor Co., Ltd. |
Transistor N-Channel MOSFET; 30V; 20V; 34mOhm; 6,5A; 1,56W; -55°C ~ 150°C; TSM240N03CX RFG TSM240N03CX TTSM240n03cx Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM240N03CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 6.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
auf Bestellung 40236 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM240N03CX RFG |
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Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 30V 6.5A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 6.5A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.54 EUR |
| TSM240N03CX RFG |
|
Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 30V 6.5A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 6.5A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.57 EUR |
| TSM240N03CX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 0.95 EUR |
| 138+ | 0.62 EUR |
| 197+ | 0.43 EUR |
| 219+ | 0.39 EUR |
| TSM240N03CX RFG |
Hersteller: Taiwan Semiconductor
MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
auf Bestellung 15449 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| TSM240N03CX RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
| 9000+ | 0.24 EUR |
| 15000+ | 0.21 EUR |
| 30000+ | 0.2 EUR |
| TSM240N03CX RFG |
Hersteller: Taiwan Semiconductor Co., Ltd.
Transistor N-Channel MOSFET; 30V; 20V; 34mOhm; 6,5A; 1,56W; -55°C ~ 150°C; TSM240N03CX RFG TSM240N03CX TTSM240n03cx
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 34mOhm; 6,5A; 1,56W; -55°C ~ 150°C; TSM240N03CX RFG TSM240N03CX TTSM240n03cx
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.42 EUR |
| TSM240N03CX RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 40236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |