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TSM2538CQ RFG

TSM2538CQ RFG Taiwan Semiconductor Corporation

pdf.php?pn=TSM2538CQ (N) Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 20V 5.5A/10A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.89W (Ta), 5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
6000+ 0.33 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 3000
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Technische Details TSM2538CQ RFG Taiwan Semiconductor Corporation

Description: MOSFET N/P-CH 20V 5.5A/10A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.89W (Ta), 5W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V, Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-DFN (2x2).

Weitere Produktangebote TSM2538CQ RFG nach Preis ab 0.39 EUR bis 1.02 EUR

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Preis ohne MwSt
TSM2538CQ RFG TSM2538CQ RFG Hersteller : Taiwan Semiconductor Corporation pdf.php?pn=TSM2538CQ (N) Description: MOSFET N/P-CH 20V 5.5A/10A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.89W (Ta), 5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
auf Bestellung 11890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
21+ 0.87 EUR
100+ 0.61 EUR
500+ 0.47 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 18
TSM2538CQ RFG Hersteller : Taiwan Semiconductor tsm2538cq_a2204.pdf TSM2538CQ RFG
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