TSM260P02CX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: -20V, -6.5A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
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Technische Details TSM260P02CX RFG Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.56W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V.
Weitere Produktangebote TSM260P02CX RFG nach Preis ab 0.29 EUR bis 1.14 EUR
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TSM260P02CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: -20V, -6.5A, SINGLE P-CHANNEL PO Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V |
auf Bestellung 10892 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM260P02CX RFG | Hersteller : Taiwan Semiconductor |
MOSFETs -20V, -6.5A, Single P-Channel Power MOSFET |
auf Bestellung 11305 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM260P02CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 20V 6.5A 3-Pin SOT-23 T/R |
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TSM260P02CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 20V 6.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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TSM260P02CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 26mΩ Mounting: SMD Gate charge: 19.5nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |