Technische Details TSM280NB06LCR RLG Taiwan Semiconductor
Description: MOSFET N-CH 60V 7A/28A 8PDFN, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PDFN (5.2x5.75), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM280NB06LCR RLG nach Preis ab 0.5 EUR bis 2.24 EUR
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TSM280NB06LCR RLG | Taiwan Semiconductor |
 Trans MOSFET N-CH 60V 28A 8-Pin PDFN EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM280NB06LCR RLG | Taiwan Semiconductor |
MOSFETs 60V, 28A, Single N-Channel Power MOSFET |
auf Bestellung 7491 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM280NB06LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 7A/28A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
auf Bestellung 589 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM280NB06LCR RLG |
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Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 60V 28A 8-Pin PDFN EP T/R
Trans MOSFET N-CH 60V 28A 8-Pin PDFN EP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.5 EUR |
| TSM280NB06LCR RLG |
|
Hersteller: Taiwan Semiconductor
MOSFETs 60V, 28A, Single N-Channel Power MOSFET
MOSFETs 60V, 28A, Single N-Channel Power MOSFET
auf Bestellung 7491 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.2 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.63 EUR |
| 2500+ | 0.56 EUR |
| 5000+ | 0.5 EUR |
| TSM280NB06LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/28A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET N-CH 60V 7A/28A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.24 EUR |
| 15+ | 1.4 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.71 EUR |