TSM2N7002AKCU RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 298mW (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM2N7002AKCU RFG Taiwan Semiconductor Corporation
Description: 60V, 0.24A, SINGLE N-CHANNEL POW, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 298mW (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Cut Tape (CT).
Weitere Produktangebote TSM2N7002AKCU RFG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | _PRICE_WITHOUT_VAT | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TSM2N7002AKCU RFG | Taiwan Semiconductor Corporation |
Description: 60V, 0.24A, SINGLE N-CHANNEL POWInput Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 298mW (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 1830 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM2N7002AKCU RFG |
![]() |
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 298mW (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 298mW (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 1830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 102+ | 0.17 EUR |
| 150+ | 0.12 EUR |
| 500+ | 0.089 EUR |
| 1000+ | 0.08 EUR |

