TSM300NB06DCR RLG

TSM300NB06DCR RLG Taiwan Semiconductor Corporation


TSM300NB06DCR_A1908.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 7500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.67 EUR
5000+0.65 EUR
7500+0.64 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM300NB06DCR RLG Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 60V 6A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 40W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.

Weitere Produktangebote TSM300NB06DCR RLG nach Preis ab 0.77 EUR bis 1.83 EUR

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TSM300NB06DCR RLG TSM300NB06DCR RLG Hersteller : Taiwan Semiconductor Corporation TSM300NB06DCR_A1908.pdf Description: MOSFET 2N-CH 60V 6A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 9988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
13+1.43 EUR
100+1.00 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
TSM300NB06DCR RLG TSM300NB06DCR RLG Hersteller : Taiwan Semiconductor TSM300NB06DCR_A1908-1918913.pdf MOSFET Dual N-Chan Pwr MOSFET 60V 25A 30mu
auf Bestellung 4899 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH