TSM300NB06LCV RGG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 24A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Technische Details TSM300NB06LCV RGG Taiwan Semiconductor Corporation
Description: 60V, 24A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFN (3.15x3.1), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.9W (Ta), 39W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM300NB06LCV RGG nach Preis ab 0.46 EUR bis 1.8 EUR
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TSM300NB06LCV RGG | Taiwan Semiconductor Corporation |
Description: 60V, 24A, SINGLE N-CHANNEL POWER Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.15x3.1) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.9W (Ta), 39W (Tc) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM300NB06LCV RGG |
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Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 24A, SINGLE N-CHANNEL POWER
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 39W (Tc)
Description: 60V, 24A, SINGLE N-CHANNEL POWER
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 39W (Tc)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 19+ | 1.12 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| 2000+ | 0.46 EUR |