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TSM300NB06LCV RGG

TSM300NB06LCV RGG Taiwan Semiconductor Corporation

TSM300NB06LCV_A2008.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 24A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.9W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.33 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM300NB06LCV RGG Taiwan Semiconductor Corporation

Description: 60V, 24A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, Power Dissipation (Max): 1.9W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3.15x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 30 V.

Weitere Produktangebote TSM300NB06LCV RGG nach Preis ab 0.39 EUR bis 1.27 EUR

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TSM300NB06LCV RGG TSM300NB06LCV RGG Hersteller : Taiwan Semiconductor Corporation TSM300NB06LCV_A2008.pdf Description: 60V, 24A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.9W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
21+0.85 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.39 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TSM300NB06LCV RGG TSM300NB06LCV RGG Hersteller : Taiwan Semiconductor TSM300NB06LCV_A2008-2302233.pdf MOSFET 60V, 24A, Single N-Channel Power MOSFET
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