TSM301K12CQ RFG

TSM301K12CQ RFG Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.54 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM301K12CQ RFG Taiwan Semiconductor Corporation

Description: MOSFET P-CH 20V 4.5A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 6.5W (Tc), Vgs(th) (Max) @ Id: 500mV @ 250µA (Min), Supplier Device Package: 6-TDFN (2x2), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V.

Weitere Produktangebote TSM301K12CQ RFG nach Preis ab 0.61 EUR bis 1.43 EUR

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Preis
TSM301K12CQ RFG TSM301K12CQ RFG Hersteller : Taiwan Semiconductor Corporation Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
auf Bestellung 6127 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
15+1.24 EUR
100+0.86 EUR
500+0.72 EUR
1000+0.61 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TSM301K12CQ RFG TSM301K12CQ RFG Hersteller : Taiwan Semiconductor TSM301K12CQ_C12-1918866.pdf MOSFET -20V, -4.5A, Single P-Channel Integrated Schottky Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH