TSM3911DCX6 RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 2.2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.46 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.4 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM3911DCX6 RFG Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 2.2A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.15W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V, Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-26, Part Status: Active.
Weitere Produktangebote TSM3911DCX6 RFG nach Preis ab 0.52 EUR bis 1.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TSM3911DCX6 RFG | Taiwan Semiconductor Corporation |
Description: MOSFET 2P-CH 20V 2.2A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-26 Part Status: Active |
auf Bestellung 47404 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM3911DCX6 RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 2.2A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Description: MOSFET 2P-CH 20V 2.2A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 47404 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 20+ | 1.07 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.52 EUR |