TSM3N90CH C5G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
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Technische Details TSM3N90CH C5G Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V.
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|---|---|---|---|---|---|
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TSM3N90CH C5G | Taiwan Semiconductor |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK Mounting: THT Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: IPAK On-state resistance: 5.1Ω Power dissipation: 94W Gate charge: 17nC Polarisation: unipolar Drain current: 1.6A Kind of channel: enhancement Drain-source voltage: 900V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TSM3N90CH C5G |
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Hersteller: Taiwan Semiconductor
MOSFET 900V 2.5A Single N-C hannel Power MOSFET
MOSFET 900V 2.5A Single N-C hannel Power MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSM3N90CH C5G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH