Technische Details TSM3N90CI C0G Taiwan Semiconductor
Description: MOSFET N-CH 900V 2.5A ITO220AB, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: ITO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 94W (Tc), Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V.
Weitere Produktangebote TSM3N90CI C0G
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TSM3N90CI C0G | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 900V 2.5A ITO220AB Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: ITO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V |
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