TSM3N90CZ C0G Taiwan Semiconductor
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Technische Details TSM3N90CZ C0G Taiwan Semiconductor
Description: MOSFET N-CH 900V 2.5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V.
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TSM3N90CZ C0G Produktcode: 169662
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 Transistoren > MOSFET N-CH |
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TSM3N90CZ C0G | Hersteller : Taiwan Semiconductor |
N Channel Power MOSFET |
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TSM3N90CZ C0G | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 900V 2.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V |
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| TSM3N90CZ C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.6A Power dissipation: 94W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 5.1Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
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