TSM4806CS RLG Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.46 EUR |
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Lieferzeit:
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Technische Details TSM4806CS RLG Taiwan Semiconductor
Description: MOSFET N-CHANNEL 20V 28A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V.
Weitere Produktangebote TSM4806CS RLG nach Preis ab 0.38 EUR bis 1.02 EUR
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TSM4806CS RLG | Taiwan Semiconductor | MOSFETs 20V, 28A, Single N-Channel Power MOSFET |
auf Bestellung 6066 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM4806CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 28A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V |
auf Bestellung 4820 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM4806CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8 Mounting: SMD Case: SOP8 Power dissipation: 2W Gate charge: 12.3nC Polarisation: unipolar Drain current: 28A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: tape On-state resistance: 20mΩ |
auf Bestellung 149 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TSM4806CS RLG |
Hersteller: Taiwan Semiconductor
MOSFETs 20V, 28A, Single N-Channel Power MOSFET
MOSFETs 20V, 28A, Single N-Channel Power MOSFET
auf Bestellung 6066 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.48 EUR |
| 5000+ | 0.43 EUR |
| TSM4806CS RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
auf Bestellung 4820 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 25+ | 0.87 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.38 EUR |
| TSM4806CS RLG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Mounting: SMD
Case: SOP8
Power dissipation: 2W
Gate charge: 12.3nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: tape
On-state resistance: 20mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Mounting: SMD
Case: SOP8
Power dissipation: 2W
Gate charge: 12.3nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: tape
On-state resistance: 20mΩ
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)