
TSM4806CS RLG Taiwan Semiconductor
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
1041+ | 0.14 EUR |
1075+ | 0.13 EUR |
1091+ | 0.12 EUR |
1128+ | 0.11 EUR |
1147+ | 0.10 EUR |
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Technische Details TSM4806CS RLG Taiwan Semiconductor
Description: MOSFET N-CHANNEL 20V 28A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V.
Weitere Produktangebote TSM4806CS RLG nach Preis ab 0.25 EUR bis 0.86 EUR
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TSM4806CS RLG | Hersteller : Taiwan Semiconductor | MOSFET 20V, 28A, Single N-Channel Power MOSFET |
auf Bestellung 6174 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM4806CS RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8 Case: SOP8 Mounting: SMD Kind of package: tape Power dissipation: 2W Polarisation: unipolar Gate charge: 12.3nC Kind of channel: enhancement Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 28A On-state resistance: 20mΩ Type of transistor: N-MOSFET |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM4806CS RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 28A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V |
auf Bestellung 4820 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM4806CS RLG | Hersteller : Taiwan Semiconductor |
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TSM4806CS RLG | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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TSM4806CS RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 28A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V |
Produkt ist nicht verfügbar |