TSM4806CS

TSM4806CS Taiwan Semiconductor Corporation



Hersteller: Taiwan Semiconductor Corporation
Description: 20V, 28A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM4806CS Taiwan Semiconductor Corporation

Description: 20V, 28A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).