TSM480P06CZ C0G Taiwan Semiconductor Corporation

Description: MOSFET P-CH 60V 20A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 66W (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.