TSM4ND65CI Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 4A ITO220
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 41.6W (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 5+ | 4.26 EUR |
| 50+ | 3.41 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.37 EUR |
| 1000+ | 2.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM4ND65CI Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 4A ITO220, Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ITO-220, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 41.6W (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.