TSM500N15CS RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 150V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 12.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.82 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM500N15CS RLG Taiwan Semiconductor Corporation
Description: 150V, 11A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Power Dissipation (Max): 12.7W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V.
Weitere Produktangebote TSM500N15CS RLG nach Preis ab 0.77 EUR bis 2.7 EUR
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TSM500N15CS RLG | Taiwan Semiconductor |
MOSFETs 150V, 11A, Single N-Channel Power MOSFET |
auf Bestellung 2635 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM500N15CS RLG | Taiwan Semiconductor Corporation |
Description: 150V, 11A, SINGLE N-CHANNEL POWE Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 12.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V |
auf Bestellung 5450 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM500N15CS RLG |
|
Hersteller: Taiwan Semiconductor
MOSFETs 150V, 11A, Single N-Channel Power MOSFET
MOSFETs 150V, 11A, Single N-Channel Power MOSFET
auf Bestellung 2635 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.67 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.04 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.82 EUR |
| 5000+ | 0.77 EUR |
| TSM500N15CS RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 150V, 11A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 12.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V
Description: 150V, 11A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 12.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V
auf Bestellung 5450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 12+ | 1.89 EUR |
| 100+ | 1.05 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.92 EUR |