TSM500P02CX Taiwan Semiconductor Corporation

Description: -20V, -4.7A, SINGLE P-CHANNEL PO, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Power Dissipation (Max): 1.56W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 800mV @ 250µA.