TSM5055DCR RLG Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 30V 10A 8PDFN, Part Status: Active, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V, Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).