TSM60N900CI C0G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 100 V
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Technische Details TSM60N900CI C0G Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 100 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
TSM60N900CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TSM60N900CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH