Technische Details TSM60NB190CI C0G Taiwan Semiconductor Corporation
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 10.8A, Power dissipation: 33.8W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.19Ω, Mounting: THT, Gate charge: 31nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote TSM60NB190CI C0G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
TSM60NB190CI C0G | Hersteller : Taiwan Semiconductor |
 MOSFET 600V 18A Single N-Ch annel Power MOSFET |
Produkt ist nicht verfügbar |
|
 |
TSM60NB190CI C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.8A Power dissipation: 33.8W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |