TSM60NB900CH C5G Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 600V 4A TO251, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 36.8W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.