TSM60NC1R5CP ROG Taiwan Semiconductor Corporation

Description: 600V, 3A, SINGLE N-CHANNEL POWER, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Power Dissipation (Max): 55W (Tc).