TSM60NC1R5CP ROG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 55W (Tc)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.74 EUR |
| 5000+ | 0.71 EUR |
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Technische Details TSM60NC1R5CP ROG Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Power Dissipation (Max): 55W (Tc).
Weitere Produktangebote TSM60NC1R5CP ROG nach Preis ab 0.79 EUR bis 4.86 EUR
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TSM60NC1R5CP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: 600V, 3A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 10355 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NC1R5CP ROG | Hersteller : Taiwan Semiconductor |
MOSFET 600V, 3A, Single N-Channel Power MOSFET |
auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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