TSM60NC390CP ROG

TSM60NC390CP ROG Taiwan Semiconductor Corporation


TSM60NC390CP_C2401.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.56 EUR
Mindestbestellmenge: 2500
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Technische Details TSM60NC390CP ROG Taiwan Semiconductor Corporation

Description: 600V, 11A, SINGLE N-CHANNEL POWE, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V.

Weitere Produktangebote TSM60NC390CP ROG nach Preis ab 1.56 EUR bis 9.70 EUR

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TSM60NC390CP ROG TSM60NC390CP ROG Hersteller : Taiwan Semiconductor Corporation TSM60NC390CP_C2401.pdf Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+2.18 EUR
100+1.73 EUR
500+1.56 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TSM60NC390CP ROG TSM60NC390CP ROG Hersteller : Taiwan Semiconductor TSM60NC390CP_C2401.pdf MOSFET 600V, 11A, Single N-Channel Power MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.70 EUR
10+8.13 EUR
25+7.67 EUR
100+6.58 EUR
250+6.21 EUR
500+5.84 EUR
1000+5.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM60NC390CP ROG TSM60NC390CP ROG Hersteller : Taiwan Semiconductor pdf.pdf Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) TO-252 T/R
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