TSM60NC390CP ROG Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 4.8 EUR |
| 10+ | 3.13 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.64 EUR |
| 2500+ | 1.56 EUR |
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Technische Details TSM60NC390CP ROG Taiwan Semiconductor
Description: 600V, 11A, SINGLE N-CHANNEL POWE, Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM60NC390CP ROG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TSM60NC390CP ROG | Hersteller : Taiwan Semiconductor Corporation |
 Description: 600V, 11A, SINGLE N-CHANNEL POWEInput Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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TSM60NC390CP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: 600V, 11A, SINGLE N-CHANNEL POWE Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |