Technische Details TSM60NE069CIT C0G Taiwan Semiconductor
Description: 600V, 24A, SINGLE N-CHANNEL HIGH, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 6V @ 3.5mA, Supplier Device Package: ITO-220TL, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V.
Weitere Produktangebote TSM60NE069CIT C0G nach Preis ab 3.55 EUR bis 15.49 EUR
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TSM60NE069CIT C0G | Hersteller : Taiwan Semiconductor |
 Trans MOSFET N-CH 600V 24A 3-Pin(3+Tab) ITO-220TL |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM60NE069CIT C0G | Hersteller : Taiwan Semiconductor Corporation |
Description: 600V, 24A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 6V @ 3.5mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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