Technische Details TSM60NE069PW C0G Taiwan Semiconductor
Description: 600V, 51A, SINGLE N-CHANNEL HIGH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 6V @ 3.5mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V.
Weitere Produktangebote TSM60NE069PW C0G nach Preis ab 4.04 EUR bis 18.55 EUR
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TSM60NE069PW C0G | Hersteller : Taiwan Semiconductor |
 Trans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-247 |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM60NE069PW C0G | Hersteller : Taiwan Semiconductor Corporation |
Description: 600V, 51A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 6V @ 3.5mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V |
auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE069PW C0G | Hersteller : Taiwan Semiconductor |
MOSFETs 600V, 51A, Single N-Channel High Voltage MOSFETs |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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