TSM60NE110CE RVG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 27A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 3.99 EUR |
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Technische Details TSM60NE110CE RVG Taiwan Semiconductor Corporation
Description: 600V, 27A, SINGLE N-CHANNEL HIGH, Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Supplier Device Package: 8-PDFN (8x8), Vgs(th) (Max) @ Id: 6V @ 2.5mA, Power Dissipation (Max): 178W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM60NE110CE RVG nach Preis ab 4.88 EUR bis 9.94 EUR
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TSM60NE110CE RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: 600V, 27A, SINGLE N-CHANNEL HIGH Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 6V @ 2.5mA Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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