TSM60NE180CE RVG Taiwan Semiconductor Corporation

Description: 600V, 20A, SINGLE N-CHANNEL HIGH, Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Supplier Device Package: 8-PDFN (8x8), Vgs(th) (Max) @ Id: 6V @ 1.8mA, Power Dissipation (Max): 169W (Tc), Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR).