TSM650P02CX RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| 6000+ | 0.16 EUR |
| 9000+ | 0.15 EUR |
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Technische Details TSM650P02CX RFG Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.1A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 800mV @ 250µA, Power Dissipation (Max): 1.56W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM650P02CX RFG nach Preis ab 0.15 EUR bis 0.64 EUR
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TSM650P02CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.1A SOT23 Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V |
auf Bestellung 70024 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM650P02CX RFG | Taiwan Semiconductor | MOSFET -20V, -4.1A, Single P-Channel Power MOSFET |
auf Bestellung 15113 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM650P02CX RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
auf Bestellung 70024 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.19 EUR |
| TSM650P02CX RFG |
Hersteller: Taiwan Semiconductor
MOSFET -20V, -4.1A, Single P-Channel Power MOSFET
MOSFET -20V, -4.1A, Single P-Channel Power MOSFET
auf Bestellung 15113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.5 EUR |
| 100+ | 0.28 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.16 EUR |
| 9000+ | 0.15 EUR |