TSM680P06CI C0G Taiwan Semiconductor Corporation

Description: MOSFET P-CH 60V 18A ITO220, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: ITO-220, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 17W (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).