TSM680P06CP Taiwan Semiconductor Co., Ltd.
Hersteller: Taiwan Semiconductor Co., Ltd.MOSFET P-CHANNEL 60V 18A TO252 TSM680P06CP ROG; TSM680P06CP-ROG; TSM680P06CP TTSM680p06cp
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 1.60 EUR |
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Technische Details TSM680P06CP Taiwan Semiconductor Co., Ltd.
Description: -60V, -18A, SINGLE P-CHANNEL POW, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V.
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TSM680P06CP | Hersteller : Taiwan Semiconductor |
P Channel Power MOSFET |
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| TSM680P06CP | Hersteller : Taiwan Semiconductor Corporation |
Description: -60V, -18A, SINGLE P-CHANNEL POW Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V |
Produkt ist nicht verfügbar |