TSM70N380CH C5G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
Description: MOSFET N-CH 700V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
auf Bestellung 695 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.9 EUR |
75+ | 6.25 EUR |
150+ | 5.36 EUR |
525+ | 4.76 EUR |
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Technische Details TSM70N380CH C5G Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 11A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V.
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Verfügbarkeit |
Preis ohne MwSt |
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TSM70N380CH C5G | Hersteller : Taiwan Semiconductor | Trans MOSFET N-CH 700V 11A 3-Pin(3+Tab) TO-251 Tube |
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TSM70N380CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK Drain-source voltage: 700V Drain current: 6.6A On-state resistance: 0.38Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 18.8nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: IPAK Anzahl je Verpackung: 1 Stücke |
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TSM70N380CH C5G | Hersteller : Taiwan Semiconductor | MOSFET 700V, 11A, Single N-Channel Power MOSFET |
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TSM70N380CH C5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK Drain-source voltage: 700V Drain current: 6.6A On-state resistance: 0.38Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 18.8nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: IPAK |
Produkt ist nicht verfügbar |