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TSM7ND60CI

TSM7ND60CI Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 7A ITO220
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 3962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.7 EUR
50+2.94 EUR
100+2.52 EUR
500+2.46 EUR
Mindestbestellmenge: 5
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Technische Details TSM7ND60CI Taiwan Semiconductor Corporation

Description: MOSFET N-CH 600V 7A ITO220, Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: ITO-220, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.

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TSM7ND60CI Hersteller : Taiwan Semiconductor TSM7ND60CI_A1804-1918853.pdf LDO Voltage Regulators 600V, 7A, Single N-Channel Power MOSFET
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