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TSM850N06CX RFG

TSM850N06CX RFG Taiwan Semiconductor Corporation

TSM850N06CX_C1811.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.31 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details TSM850N06CX RFG Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 60V 3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V, Power Dissipation (Max): 1.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V.

Weitere Produktangebote TSM850N06CX RFG nach Preis ab 0.21 EUR bis 1.34 EUR

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TSM850N06CX RFG TSM850N06CX RFG Taiwan Semiconductor TSM850N06CX_C1811.pdf MOSFETs 60V, 3A, Single N-Channel Power MOSFET
auf Bestellung 46617 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.3 EUR
10+0.58 EUR
100+0.51 EUR
500+0.39 EUR
3000+0.27 EUR
9000+0.24 EUR
24000+0.21 EUR
Mindestbestellmenge: 3 Stücke
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TSM850N06CX RFG TSM850N06CX RFG Taiwan Semiconductor Corporation TSM850N06CX_C1811.pdf Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
auf Bestellung 38873 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.34 EUR
26+0.83 EUR
50+0.61 EUR
100+0.54 EUR
500+0.4 EUR
Mindestbestellmenge: 16 Stücke
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TSM850N06CX RFG TSM850N06CX RFG TAIWAN SEMICONDUCTOR TSM850N06CX_C1811.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TSM850N06CX RFG TSM850N06CX_C1811.pdf
TSM850N06CX RFG
Hersteller: Taiwan Semiconductor
MOSFETs 60V, 3A, Single N-Channel Power MOSFET
auf Bestellung 46617 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.3 EUR
10+0.58 EUR
100+0.51 EUR
500+0.39 EUR
3000+0.27 EUR
9000+0.24 EUR
24000+0.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM850N06CX RFG TSM850N06CX_C1811.pdf
TSM850N06CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
auf Bestellung 38873 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.34 EUR
26+0.83 EUR
50+0.61 EUR
100+0.54 EUR
500+0.4 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM850N06CX RFG TSM850N06CX_C1811.pdf
TSM850N06CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH