
TSM900N06CH X0G Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
auf Bestellung 30208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
12+ | 1.53 EUR |
75+ | 0.65 EUR |
150+ | 0.58 EUR |
525+ | 0.48 EUR |
1050+ | 0.43 EUR |
2025+ | 0.39 EUR |
5025+ | 0.35 EUR |
10050+ | 0.33 EUR |
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Technische Details TSM900N06CH X0G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 11A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V.
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TSM900N06CH X0G | Hersteller : Taiwan Semiconductor |
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TSM900N06CH X0G | Hersteller : Taiwan Semiconductor |
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TSM900N06CH X0G | Hersteller : TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 25W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: THT Gate charge: 9.3nC Kind of package: tube Kind of channel: enhancement |
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