TSM900N10CP ROG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.41 EUR |
| 7500+ | 0.4 EUR |
| 12500+ | 0.39 EUR |
| 17500+ | 0.38 EUR |
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Technische Details TSM900N10CP ROG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 15A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V.
Weitere Produktangebote TSM900N10CP ROG nach Preis ab 0.26 EUR bis 1.41 EUR
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TSM900N10CP ROG | Hersteller : Taiwan Semiconductor |
MOSFETs 100V, 15A, Single N-Channel Power MOSFET |
auf Bestellung 4764 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM900N10CP ROG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 100V 15A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
auf Bestellung 22417 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM900N10CP ROG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 15A; 50W; DPAK,TO252; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 100V Drain current: 15A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: 20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 9.3nC Kind of channel: enhancement Electrical mounting: SMT |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM900N10CP ROG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 100V 15A 3-Pin(2+Tab) DPAK T/R |
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