TSUP5M45SH S1G Taiwan Semiconductor
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Technische Details TSUP5M45SH S1G Taiwan Semiconductor
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 589pF @ 4V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: SMPC4.6U, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A, Current - Reverse Leakage @ Vr: 150 µA @ 45 V, Qualification: AEC-Q101.
Weitere Produktangebote TSUP5M45SH S1G
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TSUP5M45SH S1G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 589pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V Qualification: AEC-Q101 |
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TSUP5M45SH S1G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 589pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |