TT8J21TR Rohm Semiconductor
auf Bestellung 2820 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 431+ | 0.34 EUR |
| 434+ | 0.33 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.28 EUR |
| 2000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TT8J21TR Rohm Semiconductor
Description: MOSFET 2P-CH 20V 2.5A 8TSST, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 650mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V, Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 8-TSST.
Weitere Produktangebote TT8J21TR nach Preis ab 0.48 EUR bis 2.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TT8J21TR | Hersteller : Rohm Semiconductor |
 Description: MOSFET 2P-CH 20V 2.5A 8TSSTPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 650mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-TSST |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
TT8J21TR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 20V 2.5A 8-Pin TSST T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
TT8J21TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 2.5A 8TSST Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 650mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-TSST |
auf Bestellung 3027 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
TT8J21TR | Hersteller : ROHM Semiconductor |
MOSFET P Chan-20V-2.5A Mid-PowerSwitching |
auf Bestellung 1486 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||
| TT8J21TR |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |