TT8J21TR Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 431+ | 0.4 EUR |
| 434+ | 0.39 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.36 EUR |
| 2000+ | 0.35 EUR |
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Produktbewertung abgeben
Technische Details TT8J21TR Rohm Semiconductor
Description: MOSFET 2P-CH 20V 2.5A 8TSST, Supplier Device Package: 8-TSST, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A, Drain to Source Voltage (Vdss): 20V, Power - Max: 650mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote TT8J21TR nach Preis ab 0.62 EUR bis 3.06 EUR
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TT8J21TR | Rohm Semiconductor |
 Description: MOSFET 2P-CH 20V 2.5A 8TSSTSupplier Device Package: 8-TSST Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2.5A Drain to Source Voltage (Vdss): 20V Power - Max: 650mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TT8J21TR | Rohm Semiconductor |
Trans MOSFET P-CH 20V 2.5A 8-Pin TSST T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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TT8J21TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 2.5A 8TSST Packaging: Cut Tape (CT) Supplier Device Package: 8-TSST Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2.5A Drain to Source Voltage (Vdss): 20V Power - Max: 650mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads |
auf Bestellung 3027 Stücke: Lieferzeit 10-14 Tag (e) |
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TT8J21TR | ROHM Semiconductor |
MOSFETs P Chan-20V-2.5A Mid-PowerSwitching |
auf Bestellung 1418 Stücke: Lieferzeit 10-14 Tag (e) |
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| TT8J21TR |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TT8J21TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 2.5A 8TSST
Supplier Device Package: 8-TSST
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 650mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 2.5A 8TSST
Supplier Device Package: 8-TSST
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 650mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.68 EUR |
| TT8J21TR |
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Hersteller: Rohm Semiconductor
Trans MOSFET P-CH 20V 2.5A 8-Pin TSST T/R
Trans MOSFET P-CH 20V 2.5A 8-Pin TSST T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 226+ | 0.77 EUR |
| 250+ | 0.73 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.65 EUR |
| 2500+ | 0.62 EUR |
| TT8J21TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 2.5A 8TSST
Packaging: Cut Tape (CT)
Supplier Device Package: 8-TSST
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 650mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Description: MOSFET 2P-CH 20V 2.5A 8TSST
Packaging: Cut Tape (CT)
Supplier Device Package: 8-TSST
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 650mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
auf Bestellung 3027 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.62 EUR |
| 13+ | 1.65 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.77 EUR |
| TT8J21TR |
|
Hersteller: ROHM Semiconductor
MOSFETs P Chan-20V-2.5A Mid-PowerSwitching
MOSFETs P Chan-20V-2.5A Mid-PowerSwitching
auf Bestellung 1418 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.06 EUR |
| 10+ | 1.89 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.86 EUR |
| 3000+ | 0.73 EUR |
| 6000+ | 0.67 EUR |