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Weitere Produktangebote TTC0002(Q) nach Preis ab 3.28 EUR bis 8.52 EUR
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TTC0002(Q) | Toshiba |
Bipolar Transistors - BJT NPN PWR Amp Trans 18A 35A 180W 160V |
auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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TTC0002(Q) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 160V 18A TO-3PPackaging: Bulk Package / Case: TO-3PL Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P(L) Part Status: Active Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 180 W |
auf Bestellung 249 Stücke: Lieferzeit 10-14 Tag (e) |
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TTC0002(Q) | TOSHIBA |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 18A Power dissipation: 180W Case: TO3PL Current gain: 80...160 Mounting: THT Frequency: 30MHz |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TTC0002(Q) | Toshiba |
Trans GP BJT NPN 160V 18A 180000mW 3-Pin(3+Tab) TO-3PL |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TTC0002(Q) |
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Hersteller: Toshiba
Bipolar Transistors - BJT NPN PWR Amp Trans 18A 35A 180W 160V
Bipolar Transistors - BJT NPN PWR Amp Trans 18A 35A 180W 160V
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.35 EUR |
| 10+ | 5.51 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.75 EUR |
| 1000+ | 3.61 EUR |
| 2500+ | 3.47 EUR |
| 5000+ | 3.28 EUR |
| TTC0002(Q) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 160V 18A TO-3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 180 W
Description: TRANS NPN 160V 18A TO-3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 180 W
auf Bestellung 249 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.52 EUR |
| 10+ | 5.63 EUR |
| 100+ | 3.97 EUR |
| TTC0002(Q) |
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Hersteller: TOSHIBA
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 18A
Power dissipation: 180W
Case: TO3PL
Current gain: 80...160
Mounting: THT
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 18A
Power dissipation: 180W
Case: TO3PL
Current gain: 80...160
Mounting: THT
Frequency: 30MHz
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
| TTC0002(Q) |
![]() |
Hersteller: Toshiba
Trans GP BJT NPN 160V 18A 180000mW 3-Pin(3+Tab) TO-3PL
Trans GP BJT NPN 160V 18A 180000mW 3-Pin(3+Tab) TO-3PL
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)




