TTC008(Q) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 285V 1.5A PW-MOLD2
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 285 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: PW-MOLD2
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
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Technische Details TTC008(Q) Toshiba Semiconductor and Storage
Description: TRANS NPN 285V 1.5A PW-MOLD2, Power - Max: 1.1 W, Voltage - Collector Emitter Breakdown (Max): 285 V, Current - Collector (Ic) (Max): 1.5 A, Part Status: Active, Supplier Device Package: PW-MOLD2, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
Weitere Produktangebote TTC008(Q) nach Preis ab 0.43 EUR bis 1.83 EUR
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TTC008(Q) | Toshiba |
Bipolar Transistors - BJT NPN PWR Amp Trans 1.5A IC 3A 1.1W |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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| TTC008(Q) |
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Hersteller: Toshiba
Bipolar Transistors - BJT NPN PWR Amp Trans 1.5A IC 3A 1.1W
Bipolar Transistors - BJT NPN PWR Amp Trans 1.5A IC 3A 1.1W
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.79 EUR |
| 600+ | 0.62 EUR |
| 1000+ | 0.49 EUR |
| 5000+ | 0.44 EUR |
| 10000+ | 0.43 EUR |