TTC008(Q) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS NPN 285V 1.5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 285 V
Power - Max: 1.1 W
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.46 EUR |
| 14+ | 1.28 EUR |
| 100+ | 0.98 EUR |
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Technische Details TTC008(Q) Toshiba Semiconductor and Storage
Description: TRANS NPN 285V 1.5A PW-MOLD2, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Supplier Device Package: PW-MOLD2, Part Status: Active, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 285 V, Power - Max: 1.1 W.
Weitere Produktangebote TTC008(Q) nach Preis ab 0.51 EUR bis 1.78 EUR
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TTC008(Q) | Hersteller : Toshiba |
Bipolar Transistors - BJT NPN PWR Amp Trans 1.5A IC 3A 1.1W |
auf Bestellung 716 Stücke: Lieferzeit 10-14 Tag (e) |
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