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TUAS8J

TUAS8J Taiwan Semiconductor Corporation

pdf.php?pn=TUAS8J Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2929 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.61 EUR
19+ 1.4 EUR
100+ 0.97 EUR
500+ 0.81 EUR
1000+ 0.69 EUR
2000+ 0.62 EUR
Mindestbestellmenge: 17
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Technische Details TUAS8J Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 8A SMPC4.6U, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 62pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: SMPC4.6U, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.

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TUAS8J TUAS8J Hersteller : Taiwan Semiconductor Corporation pdf.php?pn=TUAS8J Description: DIODE GEN PURP 600V 8A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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