TUAU6JH M3G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A SMPC4.6U
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 64pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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Technische Details TUAU6JH M3G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A SMPC4.6U, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SMPC4.6U, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 64pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TUAU6JH M3G nach Preis ab 1.43 EUR bis 2.64 EUR
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TUAU6JH M3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A SMPC4.6U Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 64pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Technology: Standard Reverse Recovery Time (trr): 50 ns |
auf Bestellung 4204 Stücke: Lieferzeit 10-14 Tag (e) |
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| TUAU6JH M3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A SMPC4.6U
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 64pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Description: DIODE GEN PURP 600V 6A SMPC4.6U
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 64pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Technology: Standard
Reverse Recovery Time (trr): 50 ns
auf Bestellung 4204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.64 EUR |
| 10+ | 2.17 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.43 EUR |