auf Bestellung 56 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 49.01 EUR |
| 10+ | 43.58 EUR |
| 30+ | 40.64 EUR |
| 60+ | 39.36 EUR |
| 120+ | 38.09 EUR |
| 270+ | 35.54 EUR |
| 510+ | 32.68 EUR |
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Technische Details TW027Z65C,S1F Toshiba
Description: G3 650V SIC-MOSFET TO-247-4L 27, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: TO-247-4L(X), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V, Rds On (Max) @ Id, Vgs: 38mOhm @ 29A, 18V.
Weitere Produktangebote TW027Z65C,S1F nach Preis ab 38.77 EUR bis 49.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| TW027Z65C,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: G3 650V SIC-MOSFET TO-247-4L 27Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247-4L(X) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V Rds On (Max) @ Id, Vgs: 38mOhm @ 29A, 18V |
auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) |
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