TW060N120C,S1F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: G3 1200V SIC-MOSFET TO-247 60MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 45.84 EUR |
| 30+ | 37.1 EUR |
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Technische Details TW060N120C,S1F Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 60MO, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 5V @ 4.2mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V.
Weitere Produktangebote TW060N120C,S1F nach Preis ab 36.27 EUR bis 46.15 EUR
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TW060N120C,S1F | Hersteller : Toshiba |
MOSFET G3 1200V SiC-MOSFET TO-247 60mohm |
auf Bestellung 302 Stücke: Lieferzeit 14-28 Tag (e) |
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