TW083N65C,S1F Toshiba Semiconductor and Storage

Description: G3 650V SIC-MOSFET TO-247 83MOH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 5V @ 600µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V.