U3D-M3/9AT Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.53 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.3 EUR |
| 10500+ | 0.29 EUR |
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Technische Details U3D-M3/9AT Vishay General Semiconductor
Description: DIODE GEN PURP 200V 2A DO214AB, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).
Weitere Produktangebote U3D-M3/9AT
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
U3D-M3/9AT | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 2A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| U3D-M3/9AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 2A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)