U3D-M3/9AT Vishay General Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.05 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.63 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.36 EUR |
| 10500+ | 0.35 EUR |
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Lieferzeit:
10-14 Tag (e)
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3 Stücke
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Technische Details U3D-M3/9AT Vishay General Semiconductor
Description: DIODE GEN PURP 200V 2A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote U3D-M3/9AT
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
U3D-M3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| U3D-M3/9AT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)



