UES1101SMe3/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 2.5A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 50V 2.5A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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Technische Details UES1101SMe3/TR Microchip Technology
Description: DIODE GEN PURP 50V 2.5A A AXIAL, Packaging: Tape & Reel (TR), Package / Case: Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 2.5A, Supplier Device Package: A, Axial, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 50 V.
Weitere Produktangebote UES1101SMe3/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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UES1101SMe3/TR | Hersteller : Microchip Technology |
 Rectifiers UFR,FRR |
Produkt ist nicht verfügbar |